GaAs radio frequency (RF) components have long been the preferred solution for high-performance communication device developers due to their excellent noise processing and high linearity; however, recent breakthroughs in insulating layer coating (SOI) process technology The performance of RF components based on germanium materials has been greatly broken, becoming a new alternative to GaAs solutions.
Recently, the technology of the bismuth-based products has advanced by leaps and bounds, and combined with the changes in the design process, it has gradually demonstrated the feasibility of being an alternative to GaAs in high-performance radio frequency (RF) and microwave applications.
The demand for rapid advances in equipment technology can often lead to the development of the best design, and even if this optimal design may be questioned at the beginning, there are still opportunities for practice and breakthrough. Until recently, engineers have chosen to use GaAs field-effect transistors (GaAs FETs) to design the best noise control when designing RF and microwave circuits for 4G base stations, broadband repeaters, and distributed antennas. And linear effects.
However, in the same application, for a variety of reasons, 矽-based product solutions are rarely considered by designers. Today, 矽-based products have more effective designs than before, including size, cost, reliability, and settling time. In addition, the noise, distortion, and transient response have also been improved, which can be used as an important component of circuit design.
Advantages and disadvantages of GaAs technologyGallium arsenide technology has always played an important role in wireless applications, with the advantages of low noise and high linearity, both of which transcend the 矽-based products. Because noise and linearity are key factors in important components such as variable gain amplifiers, digital step attenuators, switches, modulators, and mixers in the system, and GaAs's superior performance in these two areas, Make it the first choice for engineers.
While germanium-based products are typically used in digital environments, gallium arsenide can only be used in analog applications. Digital designs often require multi-wafer modules to be incorporated into multi-layer substrates, but such designs are often expensive and sensitive to wet environments, so they must be specially designed and handled.
The sensitivity level of the GaAs-based module is usually MSL3, so it must be activated within one week after sealing to ensure that it will not be damaged or ineffective due to moisture, or even cause the device to fail at the beginning of use. The integrated circuit using 矽 as a material is individually packaged in a quadrilateral plane without pin (QFN), so the sensitivity level is lower MSL1, and the standard reel can be executed to perform the transportation without special processing.
The QFN packaging method of the bismuth-based product can achieve better reliability and lower thermal resistance than the multi-layer splicing method of GaAs, which simplifies the design of thermal management.
In addition, GaAs products have a lower electrostatic discharge (ESD), which means they can only withstand a 500V Human-Body Model (HBM), while bismuth-based products can withstand 2kV. It is the gallium arsenide product that may be damaged by lower-level ESD events in the assembly area, while the same-function bismuth-based products require less anti-static measures.
Silicon-on-Insulator (SOI) switches typically have the advantages of RON x COFF as shown in Figure 1, while exhibiting lower insertion loss in larger isolations.
Figure 1 The base station radio block diagram shows how germanium-based products can replace gallium arsenide (dark gray) while achieving better reliability, higher integration, and lower cost in high-efficiency RF devices.
Finally, it is important to note that gallium arsenide products often rely on external passive components, such as inductors or resistors, so that the overall space must be enlarged to accommodate these external components, but at the same time add complexity.
Gallium arsenide switcher Gate Lag is obviousEquipment that requires high-speed processing of data, including 3G and 4G communication systems, industrial systems, etc., requires an RF transistor to complete the processing or to maintain the integrity of the signal within the time requirements of the command, called Settle TIme). This settling time is affected by the switch's Gate Lag setting. In general, the Gate Lag after the switch is activated can be 10-90% of the end of the rise time, and the difference from the resistance after it is fully stabilized. This value is usually between 97.5-100% after startup, and Gate Lag can also be considered as the RF output power from 90% and 100% of the time difference.
Gallium arsenide products have significant Gate Lag, especially in low temperature environments, which can significantly affect system performance. A high-speed communication system must wait for the delay caused by Gate Lag before the operation. A longer settling time may limit the processing speed and flexibility of the system, and also lengthen the test time of the production solution.
矽基RF solution performance breakthroughAlthough GaAs products have the above shortcomings, their excellent noise coefficient and Third-Order-Intercept (IP3) linear processing capability are still difficult to replace. Until now, 矽-based products, which can be used as substitutes, have overcome the traditional limitations with a new generation of technology, providing a more reliable and economical solution.
A new generation of RF switchers, such as IDT's F2912, which uses SOI technology to operate stably at high temperatures in a power amplifier (PA) assembly environment. These 矽-based switchers can still operate at temperatures greater than 120 ° C. Excellent processing performance (0.7B insertion loss, +65dBm IP3 and 60dB isolation) (Figure 2).
Figure 2 SOI switch processing performance (F2912)
IDT's other IF Variable-Gain Amplifiers (VGA) product, the F1240, provides breakthrough SNR functionality through FlatNoise technology, and FlatNoise technology ensures that even when the gain is reduced, The noise figure is kept at a low level (Figure 3), and in the past, engineers had to choose to accept a gain reduction of 1 dB without any choice, and in a reinforced SNR system, it could be up to 2 dB. Under the news, still maintain high linear processing performance.
Figure 3 FlatNoise technology in IF VGA noise coefficient
Linearity is another major improvement in 矽-based products. For example, IDT is developing RF VGA products based on 矽. This product uses Zero-DistorTIon technology to achieve "40dBm OIP3" in BW's 2,000MHz environment. The 100mA quiescent current has a 23dB adjustment range (Figure 4). In general, the more optimized linearity and bandwidth of the VGA provide engineers with greater flexibility in designing the receiving system.
Figure 4 A new generation of RF-based VGA (F0480) using Zero-DistorTIon technology
Figure 5 Glitch-Free SOI DSA (F1950)
Another important innovation, Glitch-Free, can overcome the adverse effects of Digital Step Attenuators (DSA) operations. Glitch-Free can effectively reduce the excessively high noise in the MSB state, from 10dB to 0.5dB. In precision electronics such as transmitters, this technique ensures that the gain function transitions smoothly between adjacent components. From past experience, a large 10dB fault will damage the downstream power amplifier. In addition, the traditional DSA requires a long settling time. This feature will reduce the conversion performance of the TIme-Domain Duplex (TDD) system. With Glitch-Free technology, the above-mentioned adverse effects can be effectively eliminated and system reliability can be improved. At the same time, the TDD system can be used more flexibly.
GaAs amplifiers are the designer of choice for high-performance RF devices due to their excellent noise handling and high linearity. However, recently, the design of bismuth-based products has made breakthroughs in various technologies in terms of noise and linearity. These technologies include SOI, Zero-Distortion, and Glitch-Free, which make bismuth-based products become GaAs. The choice of alternatives is a big step forward.
Ferrite is a polycrystal, sintered material with high electrical resistivity. The high resistance of ferrite makes eddy current losses extremely low at high frequencies. Therefore, unlike other magnetic components, ferrite can be used at considerably high frequencies.
We are professional in manufacturing high quality ferrite cores.
OUR company's leading products consist of Mn-Zn ferrite power series, including PC4 PC44 PC95, etc. and high-permeability material series H5K, H7K, H10K, H12K and H15K, etc. The product standard is executed in compliance with the international general standard, national standard and ISO9001 quality system.
Advantages:
1.Core material: PC40/ PC44 /PC95/H5K /H7K/ H10K/H12K and H15K
2.Features:High-frequency
3.Core cost:relatively low
4.Other tpye:EE, EEL, EI,EC,EF,EFD,ETD,EPC,PQ,RM,UU,EDR,EPC,
ET,EM,GU,POT,UF,UYF,FERRITE ROD,FERRITE FLUX ETC
5.Can be supplied with their match bobbin
6.Ferrite core are widely used in computers, tele-communication equipment, consumer's electronics such as TV, VTR and audio sets, industrial automation equipment and various kinds of electronic instruments, etc.As a leading magnets manufacturer in China, supported by our sophisticated quality system, we produce
top-quality soft ferrite, together with famous service.Our main products and each application are listed in the following:(For further information about our products.)
Application of bobbin and ferrite core
| Series | Feature |
| EE Core |
Applied in the switching power supply,main power transformer
|
| EF Core |
Applied in the switching power supply,main power transformer
|
| EFD Core |
Auxiliary powr transformer,main power transformer,choke coils
|
| EPC Core |
Auxiliary powr transformer,main power transformer
|
| PQ Core |
Applied in the linear filter,choke,pulse transformer, drive transformer
|
| UU Core |
Varieties of switching power supply transformer,choke coils ect.
|
| EC/EER/ER Core |
Applied in the linear filter ,current tranformer,smoothing choke coil,drive transformer, switching power transformers and chokes
|
| RM Core |
Filters, inductors and transformers for telecommunication other electronic equipment
|
| POT Core |
Filters for telecommunication equipment, and various kinds of inductors and transformers
|
| DR Core |
Choke coils, Peaking coils, Linearity coils, Alarm coils, Power choke coils, Fixed choke coils, Filtering coils,etc;
|
| EI Core |
Various kinds of transformers and chokes
|
| Toroidal core |
Pulse and wide-band transformers, various types of
|
FAQ
1-MOQ?
We will work hard to fit your MOQ .Small purchase quantity is ok.
2-Payment term?
T/T, Western Union, Paypal, Credit Card
3-Delivery port?
Shenzhen, Guangzhou, Zhongshan, Hongkong.
4-Shipping date?
About 7 days when we check the payment.
5-Do you produce the core and bobbin by yourself .
Yes.we have 2 head company,1 subsidiary company.one is bobbin factory,one is core factory,last one is transformer factory.
6-Where is your factory?
In ShaanxI
Mn-Zn Ferrite Core,Mn Zn Ei Core,Ferrite Core,Soft Ferrite Core
Shaanxi Magason-tech Electronics Co.,Ltd , https://www.magason-tech.com