On July 19, Fujitsu Semiconductor (Shanghai) Co., Ltd. announced the launch of a new SPI FRAM product family based on 0.18μm technology, including the three models of MB85RS256A, MB85RS128A and MB85RS64A, and will provide samples for customers from now on.
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FRAM (Ferroelectric Random Access Memory) combines the fast write of SRAM and the non-volatile advantages of flash memory on one chip. The new SPI FRAM family MB85RSxxx includes three models: MB85RS256A, MB85RS128A and MB85RS64A, representing three density levels of 256Kbit, 128Kbit and 64Kbit respectively. The operating voltage range of the three chips is 3.0 to 3.6V, and the read/write cycle is 10 billion times. The data is stored at 55°C for up to 10 years, and its operating frequency is greatly increased to a maximum of 25 MHz. Since FRAM products do not require voltage boosters during write processing, they are ideal for low power applications. The product is available in an 8-pin package with standard memory pinouts and is fully compatible with E2PROM chips.
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FRAM independent memory chips can be widely used in metrology, factory automation applications, and industries that require data acquisition, high speed writing, and durability. For customers, FRAM can not only replace all battery-backed solutions, but also a green product. In addition to the SPI FRAM family, Fujitsu Semiconductor also offers FRAM independent chips with I2C and parallel ports, with density levels ranging from 16Kbit to 4Mbit. In addition, Fujitsu plans to further expand the FRAM portfolio to meet market demand. With leading technology development and sophisticated manufacturing processes, Fujitsu Semiconductor continues to optimize product design and strengthen close cooperation with factories, laying the foundation for stable supply of high-quality products to the market.
FRAM (Ferroelectric Random Access Memory) combines the fast write of SRAM and the non-volatile advantages of flash memory on one chip. The new SPI FRAM family MB85RSxxx includes three models: MB85RS256A, MB85RS128A and MB85RS64A, representing three density levels of 256Kbit, 128Kbit and 64Kbit respectively. The operating voltage range of the three chips is 3.0 to 3.6V, and the read/write cycle is 10 billion times. The data is stored at 55°C for up to 10 years, and its operating frequency is greatly increased to a maximum of 25 MHz. Since FRAM products do not require voltage boosters during write processing, they are ideal for low power applications. The product is available in an 8-pin package with standard memory pinouts and is fully compatible with E2PROM chips.
FRAM independent memory chips can be widely used in metrology, factory automation applications, and industries that require data acquisition, high speed writing, and durability. For customers, FRAM can not only replace all battery-backed solutions, but also a green product. In addition to the SPI FRAM family, Fujitsu Semiconductor also offers FRAM independent chips with I2C and parallel ports, with density levels ranging from 16Kbit to 4Mbit. In addition, Fujitsu plans to further expand the FRAM portfolio to meet market demand. With leading technology development and sophisticated manufacturing processes, Fujitsu Semiconductor continues to optimize product design and strengthen close cooperation with factories, laying the foundation for stable supply of high-quality products to the market.
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