Under the support of the “Eleventh Five-Year†National 863 Program New Materials Field Project, the Innovation Team project of “High-efficiency Nitride LED Materials and Chip Key Technologies†undertaken by the Institute of Semiconductors of the Chinese Academy of Sciences, through technology radiation and transfer, personnel training and International exchanges and cooperation have realized the introduction, digestion, absorption and re-innovation of advanced technologies, thereby enhancing the international competitiveness of China's semiconductor lighting industry and promoting the implementation of China's semiconductor lighting projects. The subject successfully passed the acceptance test in recent days.
The innovative team of “High-efficiency Nitride LED Materials and Chip Key Technologies†has made active explorations in personnel training and team building. Through the strengthening of scientific and technological innovation team management, several national “Thousand Talents Program†and Chinese Academy of Sciences have been introduced. The winners of the Hundred Talents Program and the National Outstanding Youth have trained dozens of young talents, forming a high-level semiconductor lighting talent team with more than 100 disciplines, cutting-edge exploration capabilities, and engineering and industrialization backgrounds.
In response to the significant demand for energy saving and emission reduction in China, the innovative team of “High-efficiency Nitride LED Materials and Chip Key Technologies†has built a complete flexible semiconductor lighting process platform from semiconductor lighting major equipment, material epitaxy, chip development to efficient high-power packaging and test analysis. , with flexible research and development capabilities and engineering demonstration capabilities.
The innovation team also formed a series of important research results with independent intellectual property rights and formulated relevant technical standards. In China, it has taken the lead in breaking through the key technologies of nitride-based semiconductor epitaxial material growth and doping, chip structure design and mechanism verification, testing and packaging, achieving high-efficiency LED illumination above 150lm/w; successfully preparing China's first 300nm The following room temperature fluorescent illuminating deep ultraviolet UVLED device realizes the milliwatt output of the device power; developed the first 48-piece MOCVD prototype in China, and the third-party detection, the device epitaxial GaN material, the performance indicators reached The level of similar international MOCVD equipment.
SGM7P type (rated speed: 3000r\/min) of inertia and flat servo motor in non speed reducer.
SGM7P
Wuxi Trenty Machinery & Equipment Co., Ltd. , https://www.elec-inverter.com