Renesas Electronics has developed a 30 to 40V withstand voltage automotive super-junction MOSFET (SJ-MOSFET) with reduced on-resistance and EMI (electromagnetic noise) at the same time. ~ Held in Kanazawa City, Ishikawa Prefecture on the 30th) "Technical details (speech number 4-2) were announced." By reducing the size of the gate periphery of the SJ-MOSFET in both the horizontal and vertical directions, excellent characteristics are achieved. This is the company's third-generation on-board SJ-MOSFET, which is scheduled to begin mass production within 1 to 2 years.
Power MOSFETs used to drive in-vehicle motors with a current exceeding 100A must not only reduce switching losses, but also reduce on-resistance and gate charge. Therefore, Renesas first reduced the size of the superstructure in the horizontal direction (p / n layer spacing) and the vertical direction (thickness of the pressure-resistant layer), thereby achieving low on-resistance. The minimum pitch of the p / n layer is 1.0 μm, which is 30% smaller than the original. However, the disadvantage of this structure is that the amount of gate charge tends to increase. Therefore, Renesas Electronics suppresses the increase in gate charge by thickening the gate insulating film.
Another technical issue faced by large-capacity power MOSFETs is how to reduce the current overshoot when the body diode recovers. When the current of the low-side MOSFET increases and the current of the high-side MOSFET decreases, the latter will return to a positive number after falling to a negative number. This current overshoot can cause EMI. This time Renesas analyzed the state of the remaining holes at the time of recovery, and thus reduced the amount of impurities added to the p-type base, thereby achieving a small current overshoot recovery (soft recovery). The index indicating the current overshoot-the sub-threshold coefficient is improved by more than 20% compared with the original.
The current of the trial-produced power MOSFET is 150A, and the dielectric breakdown voltage is 32.8V. The on-resistance value is 4.75mΩmm2, which is the best level in the industry in the power MOSFET with a voltage of 30V.
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