According to the agreement, all intellectual property rights of the HVPE method for growing GaN substrate technology of the Shanghai Institute of Microsystems and Information Technology of the Chinese Academy of Sciences, including the authorized and pending patents related to this and the key technologies recognized by both parties, will be transferred to Germany.泓 photoelectric.
It is reported that after eight years of research, Yu Guanghui, a researcher at the Shanghai Institute of Microsystems and Information Technology of the Chinese Academy of Sciences, has obtained 11 invention patents, and three other invention patents are under review. Many technologies are internationally advanced. Level.
Yu Guanghui pointed out that once these key technical achievements are industrialized, the cost of GaN homogenous substrates for high-power LEDs will be greatly reduced, and the cost performance and comprehensive advantages of LED lighting products will be greatly improved, which has far-reaching significance for popularizing and popularizing LED lighting products.
According to Wang Qinrong, general manager of Desheng Optoelectronics, in the next two years, the two sides will cooperate to carry out the "HVPE method for growing GaN self-supporting substrate project", organize the implementation and promotion of the project, and form industrialization.
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