Elpida First 30nm 4GB DDR3 Notebook Memory

Japan Storage Corporation Elpida announced today that the world’s first 4GB DDR3 SO-DIMM notebook memory with 30nm advanced technology has begun trial shipments.

This memory bank uses 16 DDR3 SDRAM memory chips, double-sided dual-row placement, a total capacity of 4GB, using a standard 240-pin SO-DIMM package.

These new types of memory chips are manufactured using 30nm CMOS technology. The single-capacity 2Gb (256MB), data transfer rate up to 1866MHz (ie DDR3-1866), the supply voltage is the standard 1.5±0.075V, operating temperature 0-95°C.

Elpida asserts that compared with the previous generation 40nm process, the new 30nm process can reduce the operating current of the memory bar by 20% and the standby current by 30%, reaching a new low in the industry, complying with environmental protection and energy conservation trends, and also helping to extend battery life. Time; At the same time, the overall change of the new process production line is small, which will help reduce production and product costs.

Elpida plans to begin mass production of this 30nm 4GB DDR3 memory module in the first quarter of 2011, which can be widely used in notebooks, netbooks, tablet computers and other mobile portable devices.