Panasonic Semiconductor has developed a technology that can increase the withstand voltage of a nitride (GaN) power transistor formed on a silicon (Si) substrate by a factor of five or more, and is expected to achieve a withstand voltage of 3000 V or higher.
Panasonic Semiconductor has solved the problem that the withstand voltage of GaN power transistors depends only on the withstand voltage of the GaN film, and the cause of the problem is that the leakage current flowing through the silicon substrate and the GaN surface is suppressed, thereby improving the GaN power transistor. Withstand voltage. The thickness of the GaN film was 1.9 μm, and the withstand voltage was 2200 V, which was increased by more than 5 times.
In addition, Panasonic Semiconductor said that it would be possible to achieve a withstand voltage of 3940V if the thickness of a 9μm GaN film that has been reported in the past is used.
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