In recent years, the technology release of the millimeter wave band in the RF field has proliferated. In addition to the advancement of circuit technology itself, this year's release, the support for new applications and circuit technology solutions that can only be realized with millimeter waves have attracted much attention. On Session 23 "mm-Wave Transceivers, Power Amplifiers & Sources," Sony and the California Institute of Technology (California InsTitute of Technology) jointly released a 56 GHz transceiver circuit for connecting input and output devices, and the University of California, Berkeley. The University of Padova and STMicroelectronics jointly proposed a 90 GHz band transmission circuit for switching on-chip antennas. In addition to these new system solutions, the University of Wuppertal, Germany (University of Wuppertal) A 650 GHz receiving circuit for the 160 GHz band transceiver circuit and imaging array was also released, and nine announcements were made.
In the beginning of Sony's technology release (speech number 23.1), it was reported that the near-range wireless communication in the 56 GHz band can achieve 11 Gbit/s data transmission speed for connecting devices such as HDTV. The 40nm process CMOS transceiver circuit and wire bonding-based antenna enable communication over a distance of 1.4cm at 6.4pJ/bit. "Compared to the wired transmission mode, when the data forwarding speed is increased, the charging and discharging capacity is large, and the wireless transmission method is more conducive to reducing the power consumption due to the limitation of low power consumption." This view has caused an enthusiastic meeting at the venue. The discussion reflects the high level of attention in this area.
The release of the University of Wuppertal, Germany (speech number 23.2) reports a 160 GHz frequency orthogonal direct conversion transceiver circuit using 0.13 μm process SiGe BiCMOS technology. The oscillator oscillates between 52 GHz and 55 GHz, which is equivalent to 1/3 of the transmission and reception frequency, and generates a local signal after a factor of three.
The technology released by the Helsinki University of Technology (speech number 23.3) is related to the 77-94 GHz band 8 GHz IF signal image carrier rejection (Image RejecTIon) type transmission circuit using 65 nm process CMOS technology. When the output power is 6.6dBm, the image carrier frequency suppression amount reaches 15-20dB.
The University of California, Berkeley, etc. has released a medical pulse radar transmission circuit (speech number 23.4). The circuit uses a 0.13μm process BiCMOS technology. When the 90GHz carrier is pulse modulated, in addition to the power amplifier, the on-chip antenna is also equipped with a switch to achieve a 35ps pulse. The technical solution makes full use of the millimeter wave band characteristics that the antenna can also be on-chip.
The University of Modena and Reggio Emilia in Italy released an InjecTIon Lock type 2 multiplier circuit (speech number 23.5) that operates at 115 GHz and has a tuning range of up to 13.1%. By using a Push-Push type circuit and fully ensuring the method of injecting signals, the tuning range is 3 to 5 times larger.
In addition, there are three consecutive 60GHz band amplifier technology releases. First, Taiwan's MediaTek and IBM of the United States released a 60GHz band amplifier (speaking number 23.6) that uses a 65nm process CMOS technology to output 17.9dBm of power at a 1V supply. The amplifier is composed of three stages of four parallel, intermediate and rear stages in parallel, and the combiner is composed of a converter.
The University of California Davis has released a 60GHz band amplifier that delivers 19.9dBm of power from a 1.2V supply using a 90nm process CMOS technology (Speech #23.7). The amplifier is composed of four stages of pre-stage, two-stage two-parallel, three-stage and two-stage parallel connection. The splitter and the combiner all adopt Wilkinson type circuit.
STMicroelectronics and others have released a 60 GHz band amplifier capable of outputting 18.1 dBm power at 1.2 and 1.8 V (speaking number 23.8). This amplifier consists of eight single amplifiers in two stages connected in parallel. The single amplifier composed of two stages is a differential amplifier, and the signal can be differentially converted by the converter to achieve uniformity between the stages.
Finally, the University of Wuppertal has released a technology related to the 650 GHz receiving circuit for THz imaging (speech number 23.9). This circuit uses a 0.13μm process SiGe BiCMOS, which adds a 650 GHz signal to a bipolar transistor and a signal at about 1/4 of its frequency to produce a 100 MHz band IF signal. The conversion gain is -13dB and the noise figure is 42dB. Although the basic operation of the circuit is still confirmed, the university's challenge to the 650 GHz frequency is worth mentioning.
From the overall point of view, the simulation data and measured data of each technology are very consistent, which makes people feel that the design accuracy of the millimeter wave band technology is continuously improved. In addition, benefiting from the improvement of design accuracy, especially the continuous improvement of passive component design, as described in the serial numbers 23.6, 23.7 and 23.8, it contributes to the improvement of the maximum output power compared with the original. To realize the millimeter wave system, although the advancement of integrated circuit design is required, the related technologies including the packaging technology are also required to be continuously improved. Like last year, this year also released a lot of on-chip evaluation technology, and look forward to releasing more related technologies including packaging technology in the future.
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