Vishay Siliconix Introduces 0.6mm Ultra Low Profile MOSFET

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Recently, Vishay Intertechnology, Inc. (NYSE: VSH) announced the launch of its new 30V N-channel, SiA444DJT and 20V P-Channel TrenchFET, in a 0.6mm ultra-low profile, thermally enhanced Thin PowerPAKTM SC-70 package. Power MOSFET ---SiA429DJT. Within the 2mm x 2mm footprint, the new SiA444DJT achieves the industry's lowest form factor in N-channel MOSFETs, while the SiA429DJT, which is less than 0.8mm in height, has the lowest on-resistance in P-channel devices.

If the handheld device requires a thinner N-channel MOSFET than the standard 0.8mm, the SiA444DJT with a height of 0.6mm can meet the requirements. Its height is 13% smaller than the second thin 2mm x 2mm device and 19% smaller than the standard 0.8mm height. In addition, the MOSFET has low on-resistance of 17mΩ and 22mΩ at 10V and 4.5V. The maximum on-resistance and gate charge product is a measure of the figure of merit (FOM) of the MOSFET in DC/DC converter applications. The industry's lowest FOM of 170mΩ-nC and 110mΩ-nC at 10V and 4.5V.

The SiA429DJT has the industry's lowest on-resistance of 20.5mΩ, 27mΩ, 36mΩ, and 60mΩ at 4.5V, 2.5V, 1.8V, and 1.5V, which is sufficient for applications requiring thinner P-channel devices. The device's on-resistance at 1.8V is 12% smaller than the nearest competing device, including a standard 0.8mm MOSFET and all 2mm x 2mm P-channel MOSFETs. For handheld electronics, the lower on-resistance of the SiA429DJT and SiA444DJT means lower conduction losses, extending battery life between charge cycles.

The ultra-thin Thin PowerPAK SC-70 package used in the SiA444DJT and SiA429DJT is optimized for small handheld electronic devices such as cell phones, smartphones, MP3 players, digital cameras, e-books and tablets. Among these devices, the SiA444DJT can be used in high frequency DC/DC converters, while the SiA429DJT is ideal for load switches or charge switches and can also be used as a high side switch in DC/DC buck converter applications.

These MOSFETs are 100% Rg tested and comply with the halogen-free regulations of IEC 61249-2-21 and the RoHS Directive 2002/95/EC.

Samples and production quantities of the new SiA444DJT and SiA429DJT TrenchFET power MOSFETs are available now, with lead times of 12 to 14 weeks for larger orders.