ROHM full SiC power module product lineup is more powerful! Support 1200V 400A (BSM400D12P3G002), 600A (BSM6

3225 50M crystal

Crystal oscillator

MOSFET imported original FET

ROHM, a world-renowned semiconductor manufacturer, has developed the SiC power modules "BSM400D12P3G002" and "BSM600D12P3G001" rated at 1200V400A and 600A for inverters and converters for power supplies, solar power conditioners and UPS for industrial equipment.

This product is optimized by ROHM's unique internal structure and heat dissipation design to achieve 600A rated current, which makes it possible to use it in larger power products such as large-capacity power supplies for industrial equipment. In addition, the switching loss is reduced by 64% (at a chip temperature of 150 °C) compared to an ordinary IGBT module of the same rated current, which is very helpful for further energy saving of the application. Not only that, but also because of high-frequency drive, it is also advantageous for miniaturization of peripheral components and cooling systems. For example, the loss is calculated based on the simulation of the cooling mechanism, as compared with the same rated current of the IGBT module, the volume of water cooler module using SiC can reduce 88% ※.

This module will begin selling samples in June 2017. The production base of the previous process is ROHM ApolloCo., Ltd. (Fukuoka Prefecture, Japan), and the production base of the later process is the ROHM headquarters plant (Kyoto, Japan).

※1200V600A product, PWM inverter drive, switching frequency 20kHz, thermal grease thickness 40μm or less, heat sink specifications using commercially available information, other temperature conditions, etc.

In recent years, SiC has become more and more widely used in the fields of automobiles and industrial equipment due to its excellent energy-saving effect, and the market demand for more current SiC products is growing. In order to maximize the advantages of SiC products - high-speed switching performance, especially for power modules with high current ratings, it is necessary to develop new packages that can suppress the effects of surge voltages during switching.

In March 2012, ROHM was the first in the world to begin mass production of a full SiC power module consisting of silicon carbide with built-in power semiconductor components. Since then, series products up to 1200V and 300A rated current have been developed and widely used in many fields. In the IGBT module market, ROHM has a lineup of full SiC modules covering the main rated current range of 100A to 600A, and it is expected that demand will further increase in the future.

1. Switching loss is greatly reduced, which helps equipment energy saving

The full SiC power module equipped with SiC-SBD and SiC-MOSFET from ROHM has a 64% lower switching loss (at 150 °C chip temperature) than an ordinary IGBT module with the same rated current. Therefore, the power conversion loss of the application can be reduced, and further energy saving can be achieved.

2. High frequency drive, which is conducive to miniaturization of peripheral components

In the loss simulation of PWM inverter driving, compared with the IGBT module of the same rated current, the loss of the same switching frequency is reduced by 30% when driving at 5 kHz, and by 55% when driving at 20 kHz, and the overall loss is significantly reduced. The 20% drive reduces the required heat sink size by 88%.

Not only that, but also because of the high frequency drive, it also contributes to the miniaturization of peripheral passive components.

1. The internal inductance of the package is significantly reduced

As the rated current of the power module product becomes larger and larger, the surge voltage during the operation of the switch becomes larger, so it is necessary to reduce the inductance inside the package. This new product optimizes the built-in SiC component configuration, internal layout and pin structure, and the internal inductance is about 23% lower than previous products. At the same time, a new G-type package with a surge voltage of 27% lower than the previous package was developed, and the products with rated currents of 400A and 600A were successfully realized. Moreover, with the same surge voltage driving conditions, the new package can reduce switching losses by 24%.

2. The thermal performance of the package is significantly improved

To achieve a high current rating of 600A, it is not only necessary to reduce the internal inductance, but also requires excellent heat dissipation performance. The new product improves the flatness of the bottom plate portion that significantly affects the heat dissipation of the module, thereby reducing the thermal resistance between the backplane and the customer-installed cooling mechanism by 57%.

In addition, as with the previous SiC module products, the driver's gate driver board for evaluation was also introduced to help customers easily evaluate the product.

<SiC Power Module Product Lineup>

?inductance

The amount indicating the magnitude of the electromotive force generated by electromagnetic induction when the current flowing is changed.

Surge voltage

A voltage that changes rapidly in an instantaneously flowing current circuit. This article specifically refers to the voltage generated when the MOSFET is turned off.

?IGBT (InsulatedGateBipolarTransistor)

Insulated gate bipolar transistor. A bipolar transistor with a MOSFET at the gate.

MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor)

Metal-oxide-semiconductor field effect transistor. It is the most commonly used structure in FETs. Used as a switching element.

?SBD (SchottkyBarrierDiode)

A Schottky junction is formed by bringing a metal into contact with a semiconductor, and a diode having rectifying property (diode characteristic) can be obtained. It has the characteristics of “no minority carrier storage effect and excellent high-speed performance”.